Magneto Resistive RAM Market worth USD 12,876.2 million by 2030

The Market Statsville Group (MSG) publishes the new report on the "Magneto Resistive RAM Market by Type (Toggle MRAM and Spin-transfer Torque MRAM), by Offering (Stand-alone and Embedded), by Application (Consumer Electronics, Robotics, Enterprise Storage, Automotive, Aerospace and Defense, and Other Applications), by Region – Global Share and Forecast to 2030". The global magneto resistive RAM market size is expected to grow from USD 270.1 million in 2021 to USD 12,876.2 million by 2030, at a CAGR of 62.1% during the forecast period. MRAM's primary target applications include stand-alone, where the focus is to replace battery-backed SRAM or DRAM; embedded non-volatile memory for replacing NOR eFlash; mobile cache for replacing SRAM for low performance; and last level cache for faster dense memory for L3 or L4 cache are expected to push the demand augmented by its demand from IoT, automotive, automation, ICs, images sensors, etc.

The market is witnessing the first commercial products of embedded MRAM; for instance, in 2020, Sony's CXD5605 GPS SoC manufactured by Samsung (28nm FDSOI), which was found in Huawei's smartwatches had eMRAM die with STT-MRAM cell on M6, 28FDS SOI wafer used, and cell size 0.0361 µm2. Such developments indicate that several eMRAM-based devices are expected to enter volume production. MRAM is expected to see faster growth compared to its peers in the memory market, owing to the added benefits and proliferation of technologies, such as IoT, 5G, edge computing, AI, and ML.

Global Magneto Resistive RAM Market Segmentation

The magneto resistive RAM market has been segmented into type, offering, application, and region.

• By Type (Toggle MRAM and Spin-transfer Torque MRAM)
• By Offering (Stand-alone and Embedded)
• By Application (Consumer Electronics, Robotics, Enterprise Storage, Automotive, Aerospace and Defense, and Other Applications)
• By Region (US, Canada, Mexico, UK, Germany, France, Italy, Spain, China, Japan, India, South Korea, Southeast Asia, Australia, Saudi Arabia, UAE, South Africa, Qatar, Nigeria, Israel, Brazil, Argentina, Peru)

Stand-alone, by offering, is estimated to hold the largest market share

The global magneto resistive RAM market is segregated into Stand-alone and Embedded based on offering. The Stand-alone segment generated the highest revenue of 67.2% of the global magneto resistive RAM market in 2021, and it is expected to register a significant CAGR from 2022 to 2030. MRAM enables the next-gen of embedded devices supporting technologies, like AI, IoT, and advanced networking in the data center, at the edge, and in the endpoint applications. Moreover, stand-alone MRAM has become an important non-volatile cache and buffer for many applications. Providing MRAM for all these applications requires good MTJ design and testing in the production environment.

Stand-alone MRAM Applications include NVMe SSDs, NVDIMMS, and mobile applications. Inherent speed and NV status can replace DRAM without batteries/capacitor or backup algorithms. SSD with MRAM instead of DRAM can prevent data corruption without battery or Capacitor and can have very low latency (<10uS) and compete in markets with large monetary value for low latency. In Mobile applications, NOR-NAND-DRAM combinations and SOCs have embedded memory/SRAM, and MRAM could replace these and potentially enable space reduction.

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Asia Pacific accounts for the largest market share in the global market of magneto resistive RAM

Based on the regions, the global magneto resistive RAM market has been segmented across North America, Asia-Pacific, Europe, South America, and the Middle East & Africa. In 2021, Asia Pacific accounted for the highest market share of 45.1% in the global magneto resistive RAM market and was anticipated to maintain its dominance throughout the forecast period. Asia is a leading market in electronics, laptops, mobile phones, telecommunication, defense, and Automobiles. MRAMs are practically used in devices that have a memory inside it. The fast processing and low power consumptions make MRAMs ideal for various applications. With the increasing per capita income and rise in the disposable income of individuals, MRAMs are also expected to grow significantly in the growing markets of Asia.

Many companies, such as Samsung, focus their efforts on the growing MRAM business to expand MRAM technology's use to new markets. Beyond IoT and AI, the company intends to see its MRAM chips utilized in graphic memory, low-level caching, the automotive market, and even wearables.

This research report includes a study on the development and marketing strategies, along with a study on the product portfolios and winning strategies of the leading companies operating in the magneto resistive RAM market. It also consists of the profiles of leading companies such as Avalanche Technology Inc., Qualcomm Incorporated, Crocus Nano Electronics LLC., NVE Corporation, Everspin Technologies Inc., Tower Semiconductor, Honeywell International Inc., HFC Semiconductor Corporation, Infineon Technologies AG, Intel Corporation, Samsung Electronics Co. Ltd, Spin Transfer Technologies, and Numem Inc.

Browse complete report: https://www.marketstatsville.com/magneto-resistive-ram-market

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